Atmosphere furnace with cleanliness level 100 and oxygen concentration below 20ppm, mainly used for curing semiconductor wafers.
Features
Maximum operating temperatures of 360℃ and 500℃, with cleanliness level 100 and oxygen concentration below 20ppm, primarily used for curing semiconductor wafers (photoresist PI, PBO curing), glass substrate baking, high-precision annealing, etc
Using a high-performance filter with high-temperature resistant, maintaining cleanliness level 100 inside the chamber, allowing for high-temperature baking in a clean environment
High gas-tightness pressure chamber construction, with short oxygen concentration reaching time and extremely low N2 consumption
Maintaining high gas-tightness through magnetic sealing and a watercooling mechanism to protect sealing components from thermal effects
Quick heating and cooling, with adjustable heating and cooling rates
Standard equipped with waste liquid recovery devices to cool and recover gases
Safety Equipped with door detection switch, overheating preventer, oxygen concentration abnormality, nitrogen pressure detection, nitrogen flow detection, cooling water flow detection, leakage sensor, overcurrent leakage protection and other devices
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